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LETTERS - Silicon Alloys and Thin Film - Experimental Demonstration of a Silicon Carbide IMPATT Oscillator Yuan, L. / Cooper Jr, J.A. / Melloch, M.R. / Webb, K.J. | 2001 Gedruckte Ausgabe 266

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Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C.

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[4] CHALMERS, R. A. (1968). Aspects of Analytical Chemistry. Edinburgh: Oliver & Boyd Ltd. Pp. 14, 74-76. HASSAN, S. B. (2001). Effects of Silicon Carbide on Some Refractory Properties of Kankara Clay Proc. of the Nigerian Metallurgical Society, the 18th