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Silicon carbide Power MOSFET 1700 V, 6 A, 1.4 Ohm (typ., TJ = 150 C) in an HiP247 package SCT20N170 STMicroelectronics Announces Realloion of Shares Repurchased under its Share Buy-back Program Jul 28, 2020 STMicroelectronics announces

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Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures, approaching 1600 C with no strength loss. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces.

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