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Eyelit''s integrated manufacturing execution (MES), quality and asset management software suite selected by SiCrystal for silicon carbide (SiC) wafer manufacturing. Selection continues Eyelit’s global expansion, sale by European partner Systema.

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By comparison, silicon-based transistors of the same gate length (240 nanometers) have only been able to scale up to a clock rate of 40Ghz or so. It also sets the stage for commercial production. The research shows that "high-quality graphene can be produced on a wafer scale, and graphene transistors can be fabried with those processes used in the semiconductor industries," Lin said.

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2018/2/1· Annual Silicon Volume Shipments Remain at Record Highs MILPITAS, Calif. — Worldwide silicon wafer area shipments in 2017 increased by 10 percent against 2016 shipments, while worldwide silicon revenues rose by 21 percent over 2016 levels, reported the SEMI Silicon Manufacturers Group (SMG) in its year-end analysis of the silicon wafer industry.

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An overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial appliions. Schottky Barrier Diodes (SBDs) were the first to be made

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SDK to Introduce Second Generation High-Grade SiC …

TOKYO : Showa Denko has developed a second generation high-grade silicon carbide (SiC) epitaxial wafer (HGE-2G) suitable for power semiconductors. SDK has been mass-producing the first generation of high-grade SiC epitaxial wafer with very low defect density under the trade name of ‘High-Grade Epi’ (HGE). HGE-2G achieves further improvements in quality with six inches (150mm) […]

SDK Plans Third Expansion of High-Grade SiC Wafer …

SDK Plans Third Expansion of High-Grade SiC Wafer Production Facilities in Two Years Published on July 3, 2018 TOKYO : – Showa Denko will further expand the production capacity for high-quality-grade silicon carbide (SiC) epitaxial wafers for power semiconductors – marketed as ‘High-Grade Epi ‘ (HGE) – following the current expansion work on HGE production facilities.

(PDF) 5 μm thick 3C-SiC layers grown on Ge-modified …

We present a study of the stress state in cubic silicon carbide (3C–SiC) thin films (120 and 300 nm) grown by solid-source molecular-beam epitaxy (SSE) on Si(111) substrates modified by the

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